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| CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/5 BTD2150AE3 Features * Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA * Excellent current gain characteristics * Complementary to BTB1424AE3 Symbol BTD2150AE3 Outline TO-220AB BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature Note : Pulse test, pulse width380s, duty cycle2%. Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits 80 50 6 3 7 (Note) 1 1.8 25 150 -55~+150 Unit V V V A A W C C BTD2150AE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob ton tstg tf Min. 80 50 6 180 Typ. 0.25 15 50 0.8 3 1.2 Max. 10 10 0.5 2 820 Unit V V V A A V V MHz pF s s s Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 2/5 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=80V, IE=0 VEB=6V, IC=0 IC=2A, IB=50mA IC=2A, IB=200mA VCE=4V, IC=500mA VCE=12V, IC=200mA, f =10MHz VCB=10V, f=1MHz VCC=20V, IC=1A, IB1=15mA, IB2=-30mA,RL=20 *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range R 180~390 S 270~560 T 390~820 BTD2150AE3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Grounded Emitter Output Characteristics 140 Collector Current---IC(mA) Collector Current---IC(mA) 120 100 80 60 40 20 0 0 1 2 3 4 IB=0uA 500uA 400uA 300uA 200uA 100uA Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 3/5 Grounded Emitter Output Characteristics 700 600 500 400 300 200 100 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2.5mA 2mA 1.5mA 1mA 500uA IB=0uA 5 Collector To Emitter Voltage---VCE(V) Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) 2000 1500 1000 500 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 6 10mA 8mA 6mA 4mA 2mA IB=0mA Grounded Emitter Output Characteristics 3500 Collector Current---IC(mA) 3000 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 5mA IB=0mA 25mA 20mA 15mA 10mA Current gain vs Collector current 1000 Saturation voltage---(mV) 1000 Saturation voltage vs Collector current VCE(sat) Current gain---HFE VCE=5V 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 10000 Collector current---IC(mA) 1 1 10 100 1000 10000 Collector current---IC(mA) BTD2150AE3 CYStek Product Specification CYStech Electronics Corp. Saturation votlage vs Collector current 10000 Saturation voltage---(mV) VBE(sat)@IC=10IB Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 4/5 Power Derating Curve 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA() 200 1000 100 1 10 100 1000 10000 Collector current---IC(mA) Power Derating Curve 30 Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 Case Temeprature---TC() 200 BTD2150AE3 Power Dissipation---PD(W) CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 5/5 A D B E C Marking: D2150A H I G 4 P M 3 2 1 N Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector K O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150AE3 CYStek Product Specification |
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